High Power RF Amplifier Modules
with Stop Frequency from 500 MHz up to 1000 MHz

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SKU: 1163

The BBM2E3KLO (SKU 1163) is a 125W P3db, 20 to 520 MHz amplifier under all specified temperature and environmental conditions. Typical power output is 150W and other typical performance parameters are also listed as a guide for consideration. This amplifier is suitable use as a broadband PA building block in target markets and related end applications for electronic attack, digital communications, and test and measurement in the UHF / VHF frequency bands. This compact module utilizes the latest high power RF LDMOS transistors and also features built in control and monitoring, with protection functions to insure high availability. The control system core has a built–in non-volatile memory for event recording, and factory setup recovery features.

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RS485 Serial
Communication Protocol

• RS485 serial interface for monitoring and control
• Each module is digitally addressable, ideal for combining
• Built in variable attenuator for gain control
• Stand by mode (bias current off) and module on/off controls
• Amplifier Protection Features
• Solid-state Class AB linear design
• Suitable for CW and modulated carrier (measurement data from digital waveforms available upon request)
• 50 ohm input/output impedance
• High reliability and ruggedness

The PA includes protection circuits for:

• Under / over temperature
• Under / over voltage
• Reverse polarity
• Over current

In addition to protection circuits, the PA will withstand full reflection at the RF output at any angle for up to 1 minute at 125W CW