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GaN Amplifiers

Gallium Nitride Wide Band-Gap HEMT

Empower RF has broad experience delivering high power GaN amplifiers into mission critical applications and was a very early adopter of GaN on SiC.. Although Empower has many product lines encompassing state-of-the-art Bipolar, MOSFET, LDMOS and GaAs FET devices, GaN has become the marquee technology for TWT replacement and other applications where improvement of SWaP is desired.

Why GaN Transistors?

The key characteristics that makes Gallium Nitride an enabling technology is its significantly higher power density and greater reliability. GaN's increased power density (W/mm) has enabled Empower to reduce power amplifier sizes, minimize cooling and heat-sink demands and package more power per given volume. With the increased efficiencies that GaN provides, Empower RF delivers more reliable, smaller and lighter broadband power amplifiers.

GaN -more specifically GaN on SiC -provides higher output power, longer pulse widths, and larger duty cycles and significantly higher MTTF than GaN on Si, GaAS HEMT, LDMOS, and MOSFET high power transistors.

  • Higher Breakdown voltages 60 to 80 VBRDSS (100-150 Volts)
  • Higher Power Density
  • Superior Thermal Conductivity
  • Example: LDMOS - 12W/sq. mm dissipation vs. GaN - 70W/sq. mm dissipation
  • Higher Junction Temperatures > 200°C (+225°C to 250°C)
  • Higher Saturated Electron Drift Velocity (higher current delivering capability)
  • Lower Intrinsic Capacitance which provides higher input/output device impedances allowing broadband matching
  • GaN provides High Gain and Efficiencies (Narrow band 50% to 60%)
  • Superior Noise & Linear Power Added Efficiency (PAE)
DEVICE TECHNOLOGY FREQUENCY COVERAGE PERFORMANCE ADVANTAGES TRADE-OFFS
GaN
(Gallium Nitride HEMT)
High Electron Mobility Transistor
20-6000 MHz broadband
8-12 GHz narrowband
12-18 GHz narrowband
18-40 GHz narrowband
Up to 100 GHz Future
Broadband Matching
Ultra broadband operation
Efficiency
Linearity
Ruggedness
High Power Density
Thermal Resistance RÓ¨jc is High Cost
Low P1dB compression point
Need Negative Bias Voltage
Turn On/Off sequence
LDMOS
(Lateral Diffused Metal Oxide Semiconductor FET)
20-1000 MHz broadband
1000-3000 MHz narrowband
3400-3800 MHz narrowband
Dynamic Range
Efficiency
Linearity
Gain Simple Device
Biasing Cost
Failure to Fast Pulse
Fall Times
Low input/output impedance
Difficult to broadband match
Failure to high power peaks
Cautious under load VSWR
MOSFET VMOS, DMOS
(Metal Oxide Semiconductor FET)
20-100 MHz
100-500 MHz
500-1000 MHz
Dynamic Range
Simple Device Biasing
Ruggedness
Fast Digital waveforms
Handles peak power levels
Ultra Broadband
Matching Upper Frequency Limit
Linearity Efficiency Gain
GaAsFET
(Gallium Arsenide MESFET)
Metal Semiconductor FET
500-3000 MHz broadband
2000-4000 broadband 2-6 GHz narrowband
6-12 GHz narrowband
12-18 GHz narrowband
18-40 GHz narrowband
Linearity
Ruggedness
Fast Digital waveforms
Handles peak power levels
Efficiency
Low Gain Cost Availability
Need Negative Bias Voltage
Turn On/Off sequence
Bipolar
(Silicon)
1-30 MHz
20-100 MHz
100-500 MHz
1200-1400 MHz
2000-3000 MHz narrowband
3000-3500 MHz narrowband
Proven Pulse Capability
Highest Power Packaged Device
Ruggedness
Fast Digital waveforms
Handles peak power levels
Efficiency Class C
Low Frequency operation
Ultra Broadband matching
Efficiency
Low Gain
Linearity
Biasing circuit

GaN Amplifier Modules

PictureSKUData
Sheet
Start
(MHz)
Stop
(MHz)
Pout
(Watt)
Gain
(dB)
Modulation
Type
Size
(Inch)
Quote
1130 10 500 20 42 CW/FM/AM 3.5x2.3x1.1
1116 20 520 10 40 CW/FM/AM 4.0x2.5x1.1
1124 20 1000 30 44 CW/FM/AM 6.4x3.4x1.1
1165 1000 2000 120 50 CW/FM/AM 7.4x4.1x1.1
1149 1000 2000 150 50 CW/FM/AM 7.4x4.1x1.06
1190 1000 2000 230 10 CW/FM/AM 8.2 x 5.5 x 1.1
1109 20 2500 15 40 CW/FM/AM 8.5x6.75x1.25
1117 500 2500 25 44 CW/FM/AM 6.0x3.0x1.0
1119 500 2500 50 46 CW/FM/AM 7.4x3.6x1.1
1179 500 2500 100 50 CW/FM/AM 7.9x4.1x1.1
1189 500 2500 100 50 CW/FM/AM 7.4x3.6x1.06
1211 500 2500 100 57 CW/FM/AM/Pulse 7.0 x 4.0 x 1.1
1122 800 2500 50 46 CW/FM/AM 6.4x3.4x1.1
1113 1000 2500 50 46 CW/FM/AM 6.4x2.68x1.0
1139 1000 2500 100 12 CW/FM/AM 7.9x5.0x1.0
1205 500 2700 25 44 CW/FM/AM 6.0 x 3.0 x 1.0
1209 500 2700 50 46 CW/FM/AM 7.4x3.6x1.1
1208 500 2700 100 50 CW/FM/AM 8.2x3.6x1.06
1164 800 3000 50 50 CW/FM/AM 6.4x3.4x1.1
1132 960 3000 160 54 CW/FM/AM 12x10x1.1
1148 1000 3000 50 50 CW/FM/AM 6.4x3.4x1.1
1146 1000 3000 100 10 CW/FM/AM 6.8x4.4x1.1
1199 1000 3000 100 61 CW/FM/AM 7.0x4.0x1.1
1184 700 3800 15 42 CW/FM/AM 6.0x3.0x1.0
1183 700 3800 80 18 CW/FM/AM 9.5x4.9x1.0
1219 500 6000 25 62 CW/FM/AM/Pulse 7.0x4.0x1.1
1178 2000 6000 35 55 CW/FM/AM 6.9x3.6x1.1
1197 2000 6000 50 61 CW/FM/AM 7.0 x 4.0 x 1.1
1212 2000 6000 50 61 CW/FM/AM 7.0 x 4.0 x 1.1
1215 2000 6000 80 61 CW/FM/AM 9.0 x 5.0 x 1.2
1138 2500 6000 10 40 CW/FM/AM 6.0x3.0x1.0
1131 2500 6000 35 48 CW/FM/AM 6.9x3.6x1.1
1191 2500 6000 100 60 CW/FM/AM 8.0x6.5x1.0
Denotes best choices in this performance range.


GaN Amplifier Systems

PictureSKUData
Sheet
Start
(MHz)
Stop
(MHz)
Pout
(Watt)
Gain
(dB)
Modulation
Type
Size
(Inch)
Quote
2226 900 1600 2000 63 CW/FM/AM R8U
2157 1000 2000 1300 62 CW/FM/AM R3U+R5U
2206 1000 2000 2000 63 Pulse R6U
2207 1000 2000 4000 66 Pulse R9U
2208 1000 2000 8000 69 Pulse R15U
2199 500 2500 200 60 CW/FM/AM/Pulse R5U
2202 500 2500 1000 63 CW/FM/AM/Pulse R8U
2180 1000 2500 2000 64 CW/FM/AM R5U+R3U
2154 20 3000 500 54 CW/FM/AM C19U
2193 1000 3000 100 49 CW, Pulse R3U
2194 1000 3000 250 54 CW, Pulse R3U
2187 1000 3000 500 57 CW/FM/AM R3U
2170 1000 3000 1000 63 CW/FM/AM R5U
2211 2700 3100 1200 62 Pulse R3U
2214 2900 3500 8000 70 Pulse R19U
2213 2900 3500 10000 70 Pulse R13U
2153 700 3800 200 54 CW/FM/AM R3U
2217 5200 5900 8000 70 Pulse R17U
2198 20 6000 100 49 CW, Pulse R3U
2165 500 6000 25 46 CW/FM/AM R2U
2222 600 6000 50 50 CW/FM/AM/Pulse R3U
2223 600 6000 150 53 CW/FM/AM/Pulse R5U
2215 1900 6000 200 53 CW/FM/AM/Pulse R5U
2196 2000 6000 35 46 CW, Pulse R3U
2197 2000 6000 80 49 CW, Pulse R3U
2195 2000 6000 120 51 CW, Pulse R3U
2200 2000 6000 200 53 CW/FM/AM/Pulse R5U
2221 9000 10000 8000 70 Pulse R18U
Denotes best choices in this performance range.


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