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High Power RF Amplifier Systems
with Stop Frequencies from 2500 MHz up to 6000 MHz

SKU: 2170

The BBS4A6AUT (SKU 2170) is an L and S band microwave power amplifier suitable for multi-octave bandwidth high power CW, modulated, and pulse applications. This amplifier utilizes high power GaN devices that provide wide frequency response, high gain, high peak power capability, and low distortions. Exceptional performance, long-term reliability and high efficiency are achieved by employing advanced broadband RF matching networks and combining techniques, EMI/RFI filters, and all qualified components. The amplifier is constructed within one single 5RU drawer including the forced air-cooling. The system comes standard to operate from a three phase 208VAC line-to-line or optionally single phase 180-260VAC supply. The model 2170 is an ideal replacement for the common 500 watt and 1Kw 1Ghz to 2.5 Ghz TWT and is more reliable, has a longer life, better harmonic distortion, comparable in weight and size, and less expensive than the now obsolete TWTA in that band.

Although specified at 1 Kilowatt to 3 Ghz, this unit will provide over 600 V/m to 3.1 Ghz for Ford and GM Automotive Radiated Immunity testing as well as other demanding Test and Measurement Applications including:

  • Radiated Immunity, EMI and EMC, TWT and TWTA replacement
  • HIRF Ford 600V/m 1.2 to 1.4Ghz
  • HIRF GM 600V/m 2.7 to 3.1Ghz
  • Do-160 Section 20 including CW and Pulsed
  • CISPR
  • Multipaction
  • IEC 61000 4-3
  • 200V/m and more for Mil STD 461 Radiated Susceptibility RS103

High Power RF Amplifier Systems SKU 2170

ITAR Free

Model

2170-0XX

Start Frequency1000 MHz
Stop Frequency3000 MHz
Output Power1000 Watt
Gain63 dB
Operating Voltage Vd180-260 VAC
Power Consumption Pd5000 Watt
SizeR5U
Modulation TypeCW/FM/AM


Empower model SKU 2170: 1000-3000 MHz or 1-3 GHz, 1000 Watt, 63 dB



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System for Award Management(SAM) Registered

2017 IEEE International Symposium on Electromagnetic Compatibility
Washington, DC
August 7-11

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