GaN - Gallium Nitride Amplifiers

GaN Amplifiers

Empower has a versatile product line and has become a leader in the design, development and production of Gallium Nitride (GaN) power amplifiers. Although Empower has many product lines encompassing state-of-the-art Bipolar, MOSFET, LDMOS and GaAs FET devices, GaN has become the marquee technology for counter IED jammers.

Empower continues to work closely and has developed strategic relationships with GaN device manufacturers and has capitalized on using the latest thermally enhanced GaN on Silicon Carbide ( SiC) devices available.

GaN’s increased power density (mm/W) has enabled Empower to reduce power amplifier sizes, minimize cooling and heat-sink demands and package more power per given volume. With increased efficiencies Empower can deliver reliable, smaller and lighter broadband power amplifiers.

GaN Amplifier Modules
Picture	SKU	Data Sheet	Model	Start (MHz)	Stop (MHz)	Pout (Watt)	Gain (dB)	Size (Inch)	Quote
	1121		BBM3C3QHM	100	800	50	52	6.4x3.4x1.1
	1133		BBM2E4AEM	20	1000	25	44	6.0x3.0x1.1
	1117		BBM3K5KEL	500	2500	25	44	6.0x3.0x1.0
	1119		BBM3K5KHM	500	2500	50	46	7.4x3.6x1.1
	1189		BBM3K5KKO	500	2500	100	50	7.4x3.6x1.06
	1122		BBM3Q5KHM	800	2500	50	46	6.4x3.4x1.1
	1139		BBM4A5KK5	1000	2500	100	12	7.8x5.0x1.0
	1164		BBM3Q6AHM	800	3000	50	50	6.4x3.4x1.1
	1132		BBM3T6AMQ	960	3000	160	54	12x10x1.1
	1146		BBM4A6CK3	1000	3100	100	10	6.8x4.4x1.1
	1138		BBM5K8CAJ	2500	6000	10	40	6.0x3.0x1.0
	1131		BBM5K8CGM	2500	6000	35	48	6.9x3.6x1.1

Denotes best choices in this performance range.

GaN Amplifier Systems
Picture	SKU	Data Sheet	Model	Start (MHz)	Stop (MHz)	Pout (Watt)	Gain (dB)	Size (Inch)	Quote
	4018		GCS4M4OUT	1600	1700	1000	60	C19U
	2129		BBS3K5KHM	500	2500	50	46	R2U
	2148		BBS3K5KKO	500	2500	100	50	R3U
	2151		BBS3K5KNQ	500	2500	200	52	R3U
	2142		BBS4A5KRR	1000	2500	500	56	R5U+R3U
	2154		BBS2E6AOO	20	3000	250	54	C19U
	2125		BBS3C6ANP	105	3000	200	53	R19U
	2153		BBS3O6QNQ	700	3800	200	54	R3U
	2143		BBS6A8CHM	3000	6000	50	47	R3U